jiangsu changjiang electronics technology co., ltd sot-23 plastic-encapsulate transistors BF820/bf8 22 transistor (npn) features z low current (max.50 ma) z high voltage (max.300v) z telephony and professional communication equipment. marking: BF820:1v, bf822: 1x maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage BF820 bf822 300 250 v v ceo collector-emitter voltage BF820 bf822 300 250 v v ebo emitter-base voltage 5 v i c collector current -continuous 50 ma p c collector power dissipation 0.25 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in m ax unit collector-base breakdown voltage v (br)cbo i c =100 a, i e =0 BF820 bf822 300 250 v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 BF820 bf822 300 250 v emitter-base breakdown voltage v (br)ebo i e = 100 a, i c =0 5 v collector cut-off current i cbo v cb =200v,i e =0 0.01 a emitter cut-off current i ebo v eb = 5v,i c =0 0.05 a dc current gain h fe v ce = 20v,i c =25ma 50 collector-emitter saturation voltage v ce(sat) i c =30ma,i b = 5ma 0.6 v transition frequency f t v ce =10v, i c = 10ma, f= 100mhz 60 mhz collector output capacitance c ob v cb =30v,i e =0,f=1mhz 1.6 pf so t -23 1. base 2. emitter 3. collector www.cj-elec.com 1 a,jun,2014 www.cj-elec.com b,oct,2014 j c ( t a,may,2011
min m a x min max a 0.900 1.150 0.035 0.045 a1 0.000 0.100 0.000 0.004 a2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 d 2.800 3.000 0.110 0.118 e 1.200 1.400 0.047 0.055 e1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 l l1 0.300 0.500 0.012 0.020 0 8 0 0.550 ref 0.022 ref symbol dimensions in inches dimensions in millimeters 0.950 typ 0.037 typ 6 2 7 3 d f n d j h 2 x w o l q h ' l p h q v l r q v 6 2 7 6 x j j h v w h g 3 d g / d \ r x w www.cj-elec.com 2 a,jun,2014 www.cj-elec.com b,oct,2014
so t -23 tape and reel
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